IC Seminar

Speaker:
Yu-Ju Chuang

ECE, UIUC

Title:

Modeling and Integrated Circuits in HBT technology

Abstract:
Heterojunction bipolar transistor (HBT) technology has exhibited the potential for future high-speed applications. In order to achieve high-speed transistors, both the lateral and vertical dimensions of the device have been continuously downscaled. However, these devices exhibit different electrical and noise performance and require new investigations in their characteristics. In this talk, some main issues in the modeling of InP HBT will be discussed. The impact of dynamic self-heating and avalanche effect in the device model will be demonstrated. Additionally, some RF integrated circuits including oscillators and amplifiers will be used to validate the model accuracy.

Biography:

Yu-Ju Chuang received her B.S. and M.S. degrees in Electrical Engineering from National Taiwan University (2002) and University of Illinois at Urbana-Champaign (2004), respectively. She is currently working toward the Ph.D. degree in electrical engineering at UIUC in High-Speed Integrated Circuit Group under the instruction of Professor Milton Feng. Her research interests include modeling of HBT and passive components. She also works on RF integrated circuit designs, such as log amplifiers and VCOs using InP HBT technology.